Title :
Power analysis of DRAMs
Author :
Vollrath, Jorg ; Huebl, Markus ; Stahl, Ernst
Author_Institution :
Siemens AG, Germany
Abstract :
Power consumption for a dynamic random access memory (DRAM) is specified in a data sheet for active and standby mode as maximum average values. Further insight into DRAM operation can be gained by analyzing time behavior of the active current. Average current measurement techniques are presented in this paper to analyze time dependent current components and to calculate bitline and interbitline capacitances from power consumption
Keywords :
DRAM chips; capacitance; electric current measurement; integrated circuit testing; timing; DRAM operation; DRAM testing; active current; average current measurement techniques; bitline capacitance; dynamic RAM; dynamic current measurement method; dynamic random access memory; interbitline capacitance; power analysis; power consumption; time behavior; time dependent current components; Capacitance; Circuit noise; Circuits; Content addressable storage; Current measurement; Decoding; Energy consumption; Power measurement; Power supplies; Probes; Random access memory; Read-write memory; Voltage;
Conference_Titel :
Test Symposium, 1998. ATS '98. Proceedings. Seventh Asian
Print_ISBN :
0-8186-8277-9
DOI :
10.1109/ATS.1998.741635
