Title :
Fine analysis of emission structure of two-color semiconductor laser in near field zone
Author :
Dryakhlushin, V.F. ; Gaikovich, K.P.
Author_Institution :
Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia
Abstract :
The aim of this work is investigation of the spatial distribution of different modes of two-color semiconductor IR laser emission. The attractive property of this laser is the possibility of generation of terahertz oscillation with the help of mixing of two different modes of laser radiation. For successful realization of this problem, the spatial matching of these modes is necessary. We have achieved a higher resolution that makes it possible to observe radiation map details with sizes of about 50 nanometers. The scanning near-field optical microscope (SNOM) resolution is determined by the size of the probe aperture (∼50-100 nm), which is much smaller than the wavelength of light. To obtain better resolution, measurement results have been processed further, taking into account the probe transfer function.
Keywords :
image resolution; multiwave mixing; near-field scanning optical microscopy; optical transfer function; semiconductor device measurement; semiconductor lasers; submillimetre wave generation; 50 to 100 nm; SNOM; emission structure fine analysis; laser modes spatial distribution; laser radiation modes mixing; near field zone; probe aperture size; probe transfer function; radiation map resolution; scanning near-field optical microscope resolution; semiconductor IR laser emission; terahertz oscillation generation; two-color semiconductor laser; Deconvolution; Image retrieval; Integral equations; Laser modes; Laser theory; Optical microscopy; Probes; Semiconductor lasers; Transfer functions; Wavelength measurement;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183312
