The influence of intervalley scattering on I-V characteristics of heterostructure with one tunnel junction and expanded near-contact regions

Author

Abrarnov, I.I. ; Goncharenko, I.A. ; Kolomejtseva, Nanodev V.

Author_Institution

Belarusian State Univ. of Informatics & Radioelectronics, Minsk, Belarus

fYear

2004

fDate

13-17 Sept. 2004

Firstpage

524

Lastpage

525

Abstract

The influence of coupling constant α on I-V characteristics of a heterostructure with one tunnel junction and expanded near-contact regions was investigated. We show that it may cause a significant effect on I-V characteristic calculation results. Calculations were performed with the use of a combined two-band model based on self-consistent solution of the Schrodinger and Poisson equations. This model is a part of the nanoelectronic device simulation system NANODEV.

Keywords

Poisson equation; Schrodinger equation; electric current; nanoelectronics; semiconductor device models; semiconductor heterojunctions; tunnelling; NANODEV nanoelectronic device simulation system; Poisson equations; Schrodinger equations; combined two-band model; coupling constant; expanded near-contact regions; heterostructure I-V characteristics; intervalley scattering; self-consistent solution; tunnel junction; Gallium arsenide; Helium; Informatics; Nanoscale devices; Ohmic contacts; Physics; Poisson equations; Scattering; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on

Print_ISBN

966-7968-69-3

Type

conf

DOI

10.1109/CRMICO.2004.183317

Filename

1390299