• DocumentCode
    2497767
  • Title

    Suitable channel structure design for high electron mobility InAlAs/InGaAs MODFET

  • Author

    Inoue, D. ; Matsumura, K. ; Sawada, M. ; Harada, Y.

  • Author_Institution
    Sanyo Electric Co., Ltd., Osaka, Japan
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    501
  • Lastpage
    504
  • Abstract
    The authors developed a suitable channel structure for the N-In 0.52Al0.48As/In0.53Ga0.47As modulation doped structure theoretically based on an analysis of the two-dimensional electron gas (2DEG) distribution. The design structure and its measured electrical characteristics are outlined. 40% at 300K and 75% at 77K increase in the 2DEG mobility was experimentally demonstrated. Its great potential in application to various types of FETs is discussed
  • Keywords
    III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; two-dimensional electron gas; 300 K; 77 K; In0.52Al0.48As-In0.53Ga0.47 As; MODFET; channel structure; high electron mobility transistor; modulation doped structure; two-dimensional electron gas; Electron mobility; Epitaxial layers; HEMTs; Impurities; Indium compounds; Indium gallium arsenide; MODFETs; Scattering; Substrates; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380574
  • Filename
    380574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2497767