Title :
Effect of laser processing on gallium arsenide device structures
Author :
Bekbergenov, S.E.
Author_Institution :
Berdakh Karakalpak State Univ., Nukus, Uzbekistan
Abstract :
Some aspects of laser processing application in the formation of gallium arsenide surface-barrier structures and ohmic contacts for them are considered on the basis of analysis of experimental results known from literature, as well as those obtained by the author.
Keywords :
gallium arsenide; laser materials processing; ohmic contacts; gallium arsenide device structures; laser processing; ohmic contacts; surface-barrier structures; Annealing; Gallium arsenide; Lighting; Optical pulses;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183329
