Title :
AlInAs/GaInAs pseudomorphic HEMTs: Design and performances
Author :
Dickmann, J. ; Riepe, K. ; Daembkes, H. ; Kunzel, H.
Author_Institution :
Daimler-Benz Res. Center Ulm, Germany
Abstract :
The search for suitable ways to improve high electron mobility transistor (HEMT) device performance has stimulated research on pseudomorphic layer structures. Parameters in the layer structure which will effect a foreseeable improvement on device performance are discussed. Recent interest has been focused on pseudomorphic InAlAs/InGaAs HEMTs. The present status in this field is reviewed and new facts based on HEMT simulations and experimental results are discussed. A main focus of the simulation is the design of the channel to allow a maximum InAs mole fraction while maintaining excellent device performance
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; AlInAs-GaInAs; AlInAs/GaInAs; device performance; high electron mobility transistor; maximum InAs mole fraction; pseudomorphic layer structures; semiconductor; Contact resistance; Diodes; HEMTs; Indium compounds; Lattices; MODFETs; PHEMTs; Photonic band gap; Poisson equations; Quantization;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380584
