• DocumentCode
    2498028
  • Title

    Relation between residual voltage ratio and microstructural parameters of ZnO varistors

  • Author

    Li, Shengtao ; Xie, Feng ; Liu, Fuyi

  • Author_Institution
    Inst. of Electr. Insulation, Xi´´an Jiaotong Univ., China
  • fYear
    1998
  • fDate
    27-30 Sep 1998
  • Firstpage
    39
  • Lastpage
    42
  • Abstract
    The effect of thickness on residual voltage ratio Kr of ZnO varistors is experimentally studied, which shows that a dimensional effect of Kr also exists. The relations are experimentally investigated between residual voltage ratio Kr and breakdown strength E1mA, and Kr and microstructural parameters. It is shown that Kr decreases with E1mA, and increases with average grain size μ. An integrated parameter the product of average grain size μ and grain size variance σ2 is found to be a better parameter to show the relation between electrical properties and microstructure of ZnO varistors. A microstructural model for simulation is proposed. By using computer, the relations are simulated between Kr and thickness, Kr and average grain size μ & Kr and the product σ2μ. The simulated results are consistent with experimental ones
  • Keywords
    II-VI semiconductors; grain size; semiconductor device breakdown; varistors; zinc compounds; ZnO; ZnO varistors; breakdown strength; dimensional effect; grain size; grain size variance; microstructural parameters; residual voltage ratio; thickness; Breakdown voltage; Circuit simulation; Computational modeling; Computer simulation; Electric breakdown; Grain size; Microstructure; Shape; Varistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
  • Conference_Location
    Toyohashi
  • Print_ISBN
    4-88686-050-8
  • Type

    conf

  • DOI
    10.1109/ISEIM.1998.741679
  • Filename
    741679