• DocumentCode
    2498087
  • Title

    Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons

  • Author

    Shimoto, S. ; Fujimaki, M. ; Miyazaki, N. ; Nishihara, Y. ; Ohki, Y. ; Imamura, K. ; Terasawa, K.

  • Author_Institution
    Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
  • fYear
    1998
  • fDate
    27-30 Sep 1998
  • Firstpage
    47
  • Lastpage
    50
  • Abstract
    In this paper, we report the difference in absorption spectrum that has a close relation to photosensitivity and the improvement of the quality by thermal annealing between two Ge-doped SiO2 planar waveguides synthesized by different methods
  • Keywords
    annealing; germanium; glass structure; light absorption; optical glass; optical planar waveguides; silicon compounds; ultraviolet radiation effects; Ge-doped SiO2 planar waveguides; SiO2:Ge; absorption spectrum; photosensitivity; structural changes; thermal annealing; ultraviolet photons; Absorption; Annealing; Bragg gratings; Optical devices; Optical fibers; Optical planar waveguides; Optical waveguides; Planar waveguides; Surface treatment; Waveguide transitions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials, 1998. Proceedings of 1998 International Symposium on
  • Conference_Location
    Toyohashi
  • Print_ISBN
    4-88686-050-8
  • Type

    conf

  • DOI
    10.1109/ISEIM.1998.741681
  • Filename
    741681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2498087