A novel InGaAs Schottky-2DEG diode

Author

Marso, M. ; Kordos, P. ; Fox, A. ; Hardtdegen, H. ; Meyer, R. ; Luth, H.

Author_Institution

Inst. fuer Schicht- und Iontentechnik, Julich, Germany

fYear

1993

fDate

19-22 Apr 1993

Firstpage

397

Lastpage

400

Abstract

The preparation and properties of planar pseudomorphic InGaAs Schottky two-dimensional electron gas (2DEG) diodes are described. Single- and double-barrier diodes were prepared on metal-organic vapor phase epitaxial (MOVPE) grown modulation doped FET (MODFET)-like structures. Due to the current flow along the strained InGaAs channel the Schottky-2DEG diodes exhibit high breakdown voltage, U_br≃55 V. On double-barrier diodes extremely high capacitance ratios C_max/C_min up to 86 and varactor sensitivities S(1V) up to about 11, were measured at 10 MHz. From high-frequency analysis it follows that the diode capacitance and the series resistance decrease strongly with increased frequency in agreement with calculation

Keywords

III-V semiconductors; Schottky diodes; gallium arsenide; indium compounds; two-dimensional electron gas; 10 MHz; 55 V; InGaAs; InGaAs Schottky-2DEG diode; current flow; double-barrier diodes; extremely high capacitance ratios; high breakdown voltage; series resistance; single barrier diodes; varactor sensitivities; Capacitance; Electrons; Epitaxial growth; Epitaxial layers; FETs; HEMTs; Indium gallium arsenide; MODFETs; Schottky diodes; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380600

Filename

380600