Minority carrier diffusion length and edge surface-recombination velocity in InP

Author

Hakimzadeh, Roshanak ; Bailey, Sheila G.

Author_Institution

Sverdrup Technol. Inc., Brook Park, OH, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

640

Lastpage

643

Abstract

A scanning electron microscope was used to obtain electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned edge surface. An independent technique was used to measure the edge surface-recombination velocity (V_s). These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (C. Donolato, 1982) to obtain the electron minority carrier diffusion length (L_n)

Keywords

EBIC; III-V semiconductors; Schottky barriers; carrier lifetime; electron-hole recombination; indium compounds; minority carriers; scanning electron microscopy; semiconductor-metal boundaries; surface conductivity; EBIC; InP; SEM; Schottky barrier; edge surface-recombination velocity; electron minority carrier diffusion length; electron-beam-induced; scanned edge surface; Charge carriers; Electron beams; Indium phosphide; Radiative recombination; Scanning electron microscopy; Schottky barriers; Spontaneous emission; Surface fitting; Velocity measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380613

Filename

380613