Title :
Minority carrier diffusion length and edge surface-recombination velocity in InP
Author :
Hakimzadeh, Roshanak ; Bailey, Sheila G.
Author_Institution :
Sverdrup Technol. Inc., Brook Park, OH, USA
Abstract :
A scanning electron microscope was used to obtain electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned edge surface. An independent technique was used to measure the edge surface-recombination velocity (Vs). These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (C. Donolato, 1982) to obtain the electron minority carrier diffusion length (Ln)
Keywords :
EBIC; III-V semiconductors; Schottky barriers; carrier lifetime; electron-hole recombination; indium compounds; minority carriers; scanning electron microscopy; semiconductor-metal boundaries; surface conductivity; EBIC; InP; SEM; Schottky barrier; edge surface-recombination velocity; electron minority carrier diffusion length; electron-beam-induced; scanned edge surface; Charge carriers; Electron beams; Indium phosphide; Radiative recombination; Scanning electron microscopy; Schottky barriers; Spontaneous emission; Surface fitting; Velocity measurement; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380613
