Time-resolved photoluminescence studies on transferred thin film InP epilayers

Author

Augustine, G. ; Keyes, B.M. ; Jokerst, N.M. ; Rohatgi, A. ; Ahrenkiel, R.K.

Author_Institution

Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

636

Lastpage

639

Abstract

Time-resolved photoluminescence data are reported on InP thin films transferred on glass substrates. The films were kept below 1.1 μm in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples showed evidence of Shockley-Read-Hall recombination. For higher electron densities, the lifetime is found to be controlled by the radiative recombination process. An estimate of the radiative recombination coefficient, B, was made in terms of the photon recycling factor

Keywords

III-V semiconductors; electron density; electron-hole recombination; indium compounds; photoluminescence; radiative lifetimes; semiconductor epitaxial layers; time resolved spectra; InP; Shockley-Read-Hall recombination; electron densities; glass substrates; lifetime; liquid phase epitaxial process; n-type samples; photon recycling effect; radiative recombination coefficient; radiative recombination process; time resolved photoluminescence; time-correlated single photon counting technique; transferred thin film InP epilayers; Doping; Glass; Indium phosphide; Laser mode locking; Laser tuning; Photoluminescence; Radiative recombination; Recycling; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380614

Filename

380614