Gas phase polysulfide passivation of InP for MISFET fabrication

Gas phase polysulfide passivation of InP was studied and used to improve the electrical properties of metal-insulator-semiconductor structures and metal-insulator-semiconductor field effect transistors (MISFETs). The gas phase polysulfide treatment was used successfully to reduce the interface state density of silicon nitride/InP. MISFETs with a slow drain current drift were fabricated. The results indicate that both depletion mode and accumulation-depletion mode InP MISFETs can be fabricated with a useful drain current