DocumentCode
2499223
Title
Electronic properties of InP grown and annealed under controlled phosphorus atmosphere
Author
Hirt, G. ; Bornhorst, S. ; Friedrich, J. ; Schäfer, N. ; Müller, G.
Author_Institution
Inst. fuer Werkstoffwissenschaften, Erlangen-Nurnberg Univ., Germany
fYear
1993
fDate
19-22 Apr 1993
Firstpage
313
Lastpage
316
Abstract
By combining Hall-effect and capacitance methods it is shown that the annealing of InP under a phosphorus atmosphere causes predominantly a reduction of shallow donors, which is most likely correlated with an annihilation of intrinsic defects. Additionally two deep levels with activation energies of about 400 and 600 MeV are created or incorporated in the annealed material. Based on these results the electronic properties of heat treated nominally undoped semi-insulating InP can be explained
Keywords
Hall effect; III-V semiconductors; annealing; deep levels; impurity states; indium compounds; Hall-effect; InP; annealing; capacitance; controlled P atmosphere; deep levels; semi-insulating; semiconductor; shallow donors; Absorption; Annealing; Atmosphere; Capacitance; Conductivity; Hall effect; Indium phosphide; Neodymium; Optical materials; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380647
Filename
380647
Link To Document