• DocumentCode
    2499301
  • Title

    Study of InP MESFETs based on CdOx interfacial layers grown by the adsorption/oxidation method

  • Author

    Sawatari, H. ; Oyake, M. ; Kainosho, K. ; Okazaki, H. ; Oda, O.

  • Author_Institution
    Nippon Min. Co. Ltd., Toda, Saitama, Japan
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    297
  • Lastpage
    300
  • Abstract
    A novel method to fabricate stable Schottky diodes on n-type InP has recently been developed. The method is based on the chemical absorption of a metal and the successive oxidation to grow a very thin metal oxide layer on top of InP substrates. Various metals such as Cd, Zn, Sb and As are examined. It was found that CdOx showed the highest Schottky barrier height with the ideality factor of nearly unity. By using this novel method, preliminary work on InP MESFET fabrication was performed and FET operation was confirmed
  • Keywords
    III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; adsorbed layers; indium compounds; oxidation; FET operation; InP MESFETs; InP substrates; adsorption/oxidation method; chemical absorption; fabricate stable Schottky diodes; highest Schottky barrier height; n-type InP; semiconductor; successive oxidation; very thin metal oxide layer; Absorption; Chemicals; FETs; Fabrication; Indium phosphide; MESFETs; Oxidation; Schottky barriers; Schottky diodes; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380651
  • Filename
    380651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2499301