DocumentCode
2499321
Title
Evaporated thin silicon interlayers for indium phosphide device applications
Author
Dauplaise, H.M. ; Lorenzo, J.P. ; Martin, E.A. ; Vaccaro, K. ; Ramseyer, G.O.
Author_Institution
Rome Lab., Hanscom AFB, MA, USA
fYear
1993
fDate
19-22 Apr 1993
Firstpage
293
Lastpage
296
Abstract
The use of thin silicon films for indium phosphide device applications was investigated. Devices prepared with the silicon interlayers show a decrease in hysteresis, flat band voltage shift, and interface state density. Angular resolved X-ray photoelectron spectroscopy studies of the silicon-indium phosphide interface indicate that these effects are due to the interaction of the silicon with the native oxide of indium phosphide prior to dielectric deposition
Keywords
III-V semiconductors; X-ray photoelectron spectra; elemental semiconductors; indium compounds; interface states; semiconductor heterojunctions; semiconductor thin films; silicon; InP; Si interlayers; X-ray photoelectron spectroscopy; flat band voltage shift; interface state density; semiconductor; Chemical analysis; Dielectric substrates; Dielectrics and electrical insulation; Indium phosphide; Interface states; Laboratories; MISFETs; Optical films; Silicon compounds; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380652
Filename
380652
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