High performance InGaAs/InP JFETs with step-doped channel doping for OEIC receivers

Author

Blaser, M. ; Bauknecht, R. ; Melchior, H.

Author_Institution

Inst. of Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1993

fDate

19-22 Apr 1993

Firstpage

285

Lastpage

288

Abstract

The structure of InGaAs/InP junction field effect transistors with step-doped channel profiles for optoelectronic integrated circuit (OEIC) receiver applications is described. Transistors with a gate length of 3 microns have transconductances of 140 mS/mm, transit frequencies of 11.6 GHz and gate leakage currents around 1 μA/mm. An excess noise factor of 1.5 was measured for transistors operated in optoelectronic integrated receivers

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; semiconductor device noise; semiconductor doping; 11.6 GHz; InGaAs-InP; InGaAs/InP JFETs; OEIC receivers; excess noise factor; gate leakage currents; gate length; optoelectronic integrated circuit; semiconductor; step-doped channel doping; transconductances; transit frequencies; Application specific integrated circuits; Doping; FET integrated circuits; Frequency; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; JFETs; Leakage current; Optoelectronic devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380654

Filename

380654