Title :
Impulse response of the metal-semiconductor-metal photodetector
Author :
Averine, S.V. ; Alkeev, N.V.
Author_Institution :
Kotel´nikov Inst. of Radioeng. & Electron., Fryazino, Russia
Abstract :
Impulse response of the metal-semiconductor-metal (MSM) detectors is analyzed. Effect of optical excitation level on the MSM-photodetector performance is discussed. At low excitation level the detector speed of response is limited by parasitic capacitance of interdigitated diode structure and by the transit time of the photogene-rated carriers. At high excitation levels the detector speed of response is degraded due to the internal field screening caused by the space-charge of the holes.
Keywords :
capacitance measurement; metal-semiconductor-metal structures; photodetectors; space charge; transient response; MSM photodetector; field screening; impulse response; interdigitated diode structure; metal-semiconductor-metal; optical excitation level; parasitic capacitance; photogenerated carrier; space charge; Detectors; High speed optical techniques; Integrated optics; Optical detectors; Optical pulses; Optical reflection; Optical saturation; Metal-semiconductor-metal (MSM) diode; impulse response; optical excitation energy; photodetector;
Conference_Titel :
Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2012 6th International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4673-1940-9
DOI :
10.1109/UWBUSIS.2012.6379730
