Title :
Prompt Pulsed Neutron Activation Analysis for Detection of Fission Neutrons
Author :
Ruddy, Frank H. ; Seidel, John G. ; Flammang, Robert W.
Author_Institution :
Dept. of Sci. & Technol., Westinghouse Electr. Co., Pittsburgh, PA
fDate :
Oct. 29 2006-Nov. 1 2006
Abstract :
A pulsed-neutron interrogation technique for detection of Special Nuclear Material (SNM) is described. The technique combines timing techniques from pulsed prompt gamma neutron activation analysis with silicon carbide (SiC) semiconductor fast neutron detector technology. SiC detectors can operate during and within nanoseconds of the end of an intense neutron pulse, providing the ability to detect the prompt neutron emissions from fission events produced by the neutrons from SNM on a much faster pulsing time scale than has been achieved by other techniques. Neutron-induced fission neutrons in 235U have been observed in the time intervals between pulses of 14-MeV neutrons from a deuterium-tritium electronic neutron generator. Neutron pulsing and time-sequenced neutron counts were carried out on a hundreds of microseconds time scale, enabling the observation of prompt fission neutrons induced by the die-away of thermal neutrons following the 14-MeV pulse. SNM was detected in a variety of shielded configurations, and excellent signal-to-background ratios were observed.
Keywords :
neutron activation analysis; neutron detection; radioactive chemical analysis; semiconductor counters; SiC semiconductor fast neutron detector; deuterium-tritium electronic neutron generator; fission neutrons detection; neutron emissions; neutron pulsing; neutron-induced fission neutrons; pulsed neutron activation analysis; pulsed prompt gamma neutron activation analysis; pulsed-neutron interrogation technique; signal-to-background ratio; silicon carbide; special nuclear material; thermal neutrons; time-sequenced neutron counts; timing techniques; Activation analysis; Event detection; Gamma ray detection; Gamma ray detectors; Neutrons; Pulse generation; Radioactive decay; Semiconductor materials; Silicon carbide; Timing;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2006.356112