One step growth of buried heterostructures on non-planar InP substrates using chemical beam epitaxy

Author

Sugiura, H. ; Rudra, A. ; Carlin, J.-F. ; Araujo, D. ; Ling, J. ; Ilegems, M.

Author_Institution

Ecole Polytech. Federal de Lausanne, Switzerland

fYear

1993

fDate

19-22 Apr 1993

Firstpage

179

Lastpage

182

Abstract

The authors discuss the growth of InP, InGaAs and InGaAsP layers on nonplanar InP substrates. 2 μm wide ridges oriented along [11¯0] and [110] with (111)A, (211)A, (111)B or (55¯1) sidewall planes were prepared on (100)-oriented InP substrates by wet chemical etching. The height of the mesas ranged from 0.5 to 2 μm and they were separated by 2 to 20 μm wide valleys. Selective area growth of InP, InGaAs and InGaAsP layers was observed on a surface with ridges oriented along [110] with (111)B sidewall facets. This behavior has been applied to tailor a buried heterostructure with the same room temperature intensity as if it was grown on a planar substrate. This suggests that an array of buried heterostructure lasers can be grown by a single chemical beam epitaxy growth step on a nonplanar substrate

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor growth; semiconductor heterojunctions; semiconductor lasers; sputter etching; 0.5 to 2 micron; 2 to 20 micron; 300 K; InGaAs; InGaAsP; InP; buried heterostructure; buried heterostructures; chemical beam epitaxy; mesas; selective area growth; wet chemical etching; wide valley separation; Chemical lasers; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Laser beams; Molecular beam epitaxial growth; Optical arrays; Substrates; Temperature; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380680

Filename

380680