Title :
Semi-insulating InP:Fe by GSMBE: Optimal growth conditions
Author :
SalaÜn, S. ; Le Corre, A. ; Gauneau, M. ; Lecrosnier, D.
Author_Institution :
France Telecom, CNET, Lannion, France
Abstract :
The authors studied the quality of gas source molecular beam epitaxy (GSMBE) InP:Fe epitaxial layers as a function of growth conditions using secondary ion mass spectroscopy and resistivity measurements. Varying the growth temperature and the phosphine (PH3 ) flow rate allows control of the atom surface mobility during growth, hence permitting decrease of the interactions between iron atoms, to improve their incorporation in the InP layers. For optimized growth conditions, a semi-insulating behavior of GSMBE InP:Fe epitaxial layers is demonstrated with resistivities in excess of 108 Ω.cm for an iron concentration above 1017 cm-3
Keywords :
III-V semiconductors; electrical resistivity; impurity distribution; impurity states; indium compounds; iron; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; InP:Fe; atom surface mobility; gas source molecular beam epitaxy; growth temperature; impurity concentration; phosphine flow rate; resistivity; secondary ion mass spectroscopy; Atomic beams; Atomic layer deposition; Conductivity; Epitaxial layers; Indium phosphide; Iron; Mass spectroscopy; Molecular beam epitaxial growth; Telecommunications; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380688
