Semi-insulating InP:Fe grown on Si

Author

Schnabel, R.F. ; Heinrichsdorff, F. ; Krost, A. ; Grundmann, M. ; Wolf, T. ; Schatke, K. ; Bimberg, D. ; Pilatzek, M. ; Harde, P.

Author_Institution

Inst. fur Festkorperphysik, Tech. Univ. Berlin, Germany

fYear

1993

fDate

19-22 Apr 1993

Firstpage

115

Lastpage

118

Abstract

Metal organic chemical vapor deposition of undoped and Fe-doped InP on vicinal Si(001) and Si(111) is reported. Semi-insulating InP on Si(111) with a resistivity of 3 × 10⁷ Ωcm has been made for the first time. The resistivity increases with decreasing defect density in the InP:Fe epitaxial layers. In InP/Si(111), a considerable reduction of crystal defects by one order of magnitude was found as compared to InP/Si(001). In consequence, the undesired defect induced effects of strong Si incorporation and incorporation of electrically inactive Fe are almost suppressed

Keywords

III-V semiconductors; defect states; electrical resistivity; impurity distribution; indium compounds; iron; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InP:Fe; Si; chemical vapor deposition; defect density; epitaxial layers; resistivity; Annealing; Chemical vapor deposition; Circuits; Conducting materials; Frequency; Indium phosphide; Iron; Substrates; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380696

Filename

380696