Thin-film SOI technology: the solution to many submicron CMOS problems

Author

Colinge, J.-P.

Author_Institution

IMEC, Leuven, Belgium

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

817

Lastpage

820

Abstract

The performances of thin-film SOI (silicon-on-insulator) MOSFETs and CMOS circuits are presented. Attention is given to the SOI material, device properties, and design and processing. It is noted that this technology is extremely attractive for deep-submicron applications because of such properties as improved subthreshold slope, reduced short-channel effects, reduced electric fields, increased transconductance, and better immunity to soft errors. Front-end CMOS processing of thin films of SOI is also considerably simpler than bulk device processing. The competitiveness of TFSOI technology on the CMOS market is discussed.<>

Keywords

CMOS integrated circuits; VLSI; integrated circuit technology; semiconductor thin films; semiconductor-insulator boundaries; CMOS circuits; CMOS processing; SIMOX; SOI material; Si-SiO/sub 2/-Si; TFSOI CMOS; TFSOI technology; deep-submicron applications; design; device properties; ease of processing; immunity to soft errors; improved subthreshold slope; increased transconductance; process simplification; processing; reduced electric fields; reduced short-channel effects; scaling; submicron CMOS; CMOS process; CMOS technology; MOSFETs; Process design; Semiconductor thin films; Silicon on insulator technology; Thin film circuits; Thin film devices; Transconductance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74178

Filename

74178