Impurity related interface effects in GSMBE grown InP

Author

Rakennus, K. ; Likonen, J. ; Nappi, J. ; Tappura, K. ; Asonen, H. ; Pessa, M.

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

fYear

1993

fDate

19-22 Apr 1993

Firstpage

107

Lastpage

110

Abstract

The authors have found a highly conductive n-type interface layer between semi-insulating InP substrate and undoped InP layer grown by gas source molecular beam epitaxy. Due to this interfacial layer the measured Hall mobilities at 300 K and 77 K are underestimated and carrier concentration is overestimated. The secondary ion mass spectrometry depth profiles reveal an accumulation of silicon and carbon at the interface. The samples were grown on differently pretreated substrates. It seems that silicon and carbon contaminations originate from the exposure to air during the loading to the growth chamber

Keywords

Hall effect; III-V semiconductors; carrier density; carrier mobility; indium compounds; interface states; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor junctions; 300 K; 77 K; Hall mobilities; InP; carrier concentration; gas source molecular beam epitaxy; interfacial layer; pretreated substrates; secondary ion mass spectrometry depth profiles; Chemical analysis; Chemical technology; Impurities; Indium phosphide; Inductors; Molecular beam epitaxial growth; Physics; Pollution measurement; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380698

Filename

380698