• DocumentCode
    2500226
  • Title

    Quantum versus classical scattering time in liquid phase epitaxial Ga0.47In0.53As/InP

  • Author

    Pödör, B. ; Novikov, S.V. ; Savel´ev, I.G. ; Gombos, G.

  • Author_Institution
    Res. Inst. for Tech. Phys., Hungarian Acad. of Sci., Budapest, Hungary
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    103
  • Lastpage
    106
  • Abstract
    The authors present the results of Shubnikov m- effect measurements in two-dimensional electron gas in modulation-doped Ga0.47In0.53As/InP heterostructures grown by liquid phase epitaxy. Shubnikov-de Haas measurements were performed at 4.2 K temperature in magnetic fields up to 5.3 Tesla using a superconducting magnet system. From the magnetoresistance oscillation amplitudes the quantum scattering time and its ratio to the classical scattering time were deduced
  • Keywords
    III-V semiconductors; Shubnikov-de Haas effect; gallium arsenide; indium compounds; quantum interference phenomena; semiconductor epitaxial layers; semiconductor heterojunctions; two-dimensional electron gas; 4.2 K; 5.3 T; Ga0.47In0.53As-InP; Shubnikov m- effect; Shubnikov-de Haas measurements; liquid phase epitaxy; magnetoresistance oscillation amplitudes; modulation doping; quantum scattering time; superconducting magnet; two-dimensional electron gas; Electrons; Epitaxial growth; Epitaxial layers; Indium phosphide; Magnetic field measurement; Particle scattering; Performance evaluation; Phase measurement; Superconducting magnets; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380699
  • Filename
    380699
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2500226