Hole capture cross section of the deep Ti donor level in InP

Author

Scheffler, H. ; Baber, N. ; Dadgar, A. ; Wolf, T. ; Bimberg, D.

Author_Institution

Inst. fur Festkorperphysik, Tech. Univ. Berlin, Germany

fYear

1993

fDate

19-22 Apr 1993

Firstpage

99

Lastpage

102

Abstract

The hole capture cross section σ_p of the deep Ti ³⁺/Ti⁴⁺ donor level in InP has been measured as a function of temperature. Two different capacitance spectroscopy techniques have been used, namely deep level transient spectroscopy and an isothermal capacitance measurement method for capture measurements at high and low temperatures, respectively. σ_p has been found to increase with temperature from 2.8 × 10^-23 cm ² at 100 K to 2.7 × 10^-22 at 300 K, in agreement with a multiphonon emission process. The capture barrier for hole capture amounts to (30±5) meV

Keywords

III-V semiconductors; capacitance; deep levels; electron-phonon interactions; hole traps; indium compounds; phonon-phonon interactions; phonons; titanium; 100 to 300 K; InP:Ti; capacitance spectroscopy; capture barrier; deep level transient spectroscopy; donor level; hole capture cross section; isothermal capacitance; multiphonon emission; Capacitance measurement; Diodes; Doping; Fabrication; Gold; Indium phosphide; Iron; Isothermal processes; Ohmic contacts; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380700

Filename

380700