Improved fabrication of 4 × 4 polarisation insensitive switch matrices on InP by introduction of an etch stop layer

Author

Peyre, J.L. ; Goutelle, A. ; Pagnod-Rossiaux, Ph ; Vinchant, J.F.

Author_Institution

Alcatel Alsthom Recherche, Marcoussis, France

fYear

1993

fDate

19-22 Apr 1993

Firstpage

84

Lastpage

87

Abstract

The first polarization insensitive to 4 × 4 switch matrix on InP with digital optical switches (DOS) has been recently presented (J-F. Vinchant et al., 1992). The authors report processing and performance improvements of this matrix by introduction of an etch stop layer in the structure grown by gas source molecular beam epitaxy (GSMBE). Several heterostructures grown on 2-inch wafers by GSMBE in a Virian reactor have been processed. This epitaxial technique allows high homogeneity of layers´ thickness and doping. The optical characterization of the matrices has been done by using a 1.54 μm wavelength laser for both transverse electric (TE) and transverse magnetic (TM) polarization. The results are reported

Keywords

III-V semiconductors; chemical beam epitaxial growth; etching; indium compounds; integrated optoelectronics; optical switches; semiconductor growth; 1.54 micron; 2 in; InP; Virian reactor; digital optical switches; doping; epitaxial technique; etch stop layer; fabrication; gas source molecular beam epitaxy; heterostructures; homogeneity; optical characterization; performance; polarisation insensitive switch matrices; processing; transverse electric polarization; transverse magnetic polarisation; Doping; Etching; Gas lasers; Indium phosphide; Inductors; Molecular beam epitaxial growth; Optical device fabrication; Optical polarization; Optical switches; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380704

Filename

380704