DocumentCode
2500573
Title
Group V interdiffusion in In0.66Ga0.33As/ In 0.66Ga0.33As0.7P0.3 quantum well structures
Author
Gillin, W.P. ; Bradley, I.V. ; Foo, W.L. ; Homewood, K.P. ; Perrin, S.D. ; Spurdens, P.C.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Surrey, UK
fYear
1993
fDate
19-22 Apr 1993
Firstpage
33
Lastpage
35
Abstract
The diffusion coefficient for arsenic and phosphorous interdiffusion has been measured as a function of temperature in In0.66Ga0.33As/ In0.66Ga0.33As0.7P0.3 strained quantum wells, using the photoluminescence from the n = 1 electron to heavy hole transition. The authors have used the shift in the photoluminescence from a 100Å single quantum well of In0.66Ga0.33As in In0.66Ga0.33 As0.7P0.3 barriers with annealing to monitor the interdiffusion. In this system there is no concentration gradient to drive group III interdiffusion and therefore the variation in the photoluminescence transition energy was modeled using only phosphorous/arsenic interdiffusion in the model. By performing several anneals to a single sample and measuring the shift in the photoluminescence after each anneal the interdiffusion was monitored as a function of time. Between temperatures of 900°C and 700°C the diffusion coefficient, D, can be described using the relationship D = D oexp(-EA/kT) where Do = 507 cm2 /s and EA = 3.9 eV
Keywords
III-V semiconductors; chemical interdiffusion; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; spectral line shift; 100 angstrom; 900 to 700 degC; In0.66Ga0.33As-In0.66Ga0.33 As0.7P0.3; In0.66Ga0.33As/ In0.66Ga0.33As0.7P0.3 strained quantum wells; annealing; concentration gradient; diffusion coefficient; electron to heavy hole transition; group III interdiffusion; group V interdiffusion; line shift; model; photoluminescence; photoluminescence transition energy; single quantum well; Annealing; Argon; Equations; Gratings; Laser excitation; Laser modes; Laser theory; Luminescence; Performance evaluation; Photoluminescence;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380717
Filename
380717
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