InP-based microelectronics pilot line for commercial and military applications

Author

Greiling, Paul T.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

3

Lastpage

6

Abstract

High performance microwave and millimeter-wave InP-based high-electron mobility transistor (HEMT) and heterostructure bipolar transistor (HBT) ICs are being developed by Hughes Research Laboratories for future commercial and military communication and radar systems. The status of InP-based device and IC technology relative to competing silicon- and GaAs-based technologies is reviewed. Technology insertion issues, such as performance, cost, and manufacturability, are discussed based on the Hughes InP-based microelectronics prototype line. The potential market for the technology is reviewed

Keywords

HEMT integrated circuits; III-V semiconductors; bipolar MIMIC; bipolar MMIC; field effect MIMIC; field effect MMIC; heterojunction bipolar transistors; indium compounds; integrated circuit manufacture; integrated circuit technology; military equipment; HBT; HEMT; ICs; InP-based microelectronics pilot line; commercial applications; cost; heterostructure bipolar transistor; high-electron mobility transistor; manufacturability; microwave; military applications; millimeter-wave; performance; potential market; radar systems; Bipolar transistors; HEMTs; Heterojunction bipolar transistors; MODFETs; Microelectronics; Microwave devices; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380725

Filename

380725