Title :
1.5 mu m MQW-DFB laser diode with low chirp and low threshold current
Author :
Mizuguchi, K. ; Yoshida, N. ; Kimura, T. ; Takemoto, A. ; Ohkura, Y. ; Tsugami, M. ; Murotani, T.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
1.55- mu m band InGaAs-InGaAsP multiple-quantum-well distributed feedback laser diodes have been successfully fabricated by metalorganic chemical vapor deposition. The threshold current is as low as 9 mA, and the slope efficiency is 0.2 mW/mA. A very low chirp of 3 AA at 2 Gbit/s NRZ modulation is obtained.<>
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; semiconductor quantum wells; vapour phase epitaxial growth; 1.5 to 1.55 micron; 2 Gbit/s; 9 mA; InGaAs-InGaAsP; MOCVD; MQW-DFB laser diode; NRZ modulation; distributed feedback laser diodes; long haul high bit rate communications; low chirp characteristic; low threshold current; metalorganic chemical vapor deposition; multiple-quantum-well; semiconductors; slope efficiency; Chirp; Diode lasers; Distributed feedback devices; Indium gallium arsenide; MOCVD; Optical resonators; Optical signal processing; Quantum well devices; RNA; Threshold current;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74185
