DocumentCode
2501546
Title
Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198)
fYear
1998
fDate
29-29 Sept. 1998
Firstpage
1
Abstract
The following topics were covered: ESD and radiation effects; analog design; power devices; modelling and simulation; SiGe process technology; RF circuits and technology; process technology for RF applications; communication circuits; advanced silicon bipolar process technology; distortion, noise, and transient effects in bipolar transistors; modeling and parameter extraction
Keywords
BiCMOS integrated circuits; UHF integrated circuits; bipolar integrated circuits; bipolar transistors; electrostatic discharge; integrated circuit design; integrated circuit modelling; integrated circuit technology; power integrated circuits; radiation effects; telecommunication equipment; ESD; RF circuits; Si; Si bipolar process technology; SiGe; SiGe process technology; analog design; bipolar transistors; communication circuits; distortion; modelling; noise; parameter extraction; power devices; radiation effects; simulation; transient effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location
Minneapolis, MN, USA
ISSN
1088-9299
Print_ISBN
0-7803-4497-9
Type
conf
DOI
10.1109/BIPOL.1998.741859
Filename
741859
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