DocumentCode
2501740
Title
The state of the art of electrostatic discharge protection: physics, technology, circuits, design, simulation and scaling
Author
Voldman, Steven H.
Author_Institution
Semicond. R&D Center, IBM Corp., Essex Junction, VT, USA
fYear
1998
fDate
27-29 Sep 1998
Firstpage
19
Lastpage
30
Abstract
This paper discusses state of the art electrostatic discharge (ESD) protection in advanced semiconductor technologies and emerging technologies. ESD physics, semiconductor process issues, device and circuit simulation, circuits, and devices are examined
Keywords
electrostatic discharge; integrated circuit design; integrated circuit technology; integrated circuit testing; monolithic integrated circuits; protection; reviews; silicon-on-insulator; ESD physics; ESD protection; ESD testing; IC scaling; SOI; Si; advanced semiconductor technologies; circuit simulation; device simulation; electrostatic discharge protection; semiconductor process issues; Circuit simulation; Electrostatic discharge; Frequency; MOSFETs; Physics; Protection; Space vector pulse width modulation; Temperature; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-4497-9
Type
conf
DOI
10.1109/BIPOL.1998.741871
Filename
741871
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