DocumentCode :
2502007
Title :
Advanced power bipolar devices
Author :
Jaecklin, Andre A.
Author_Institution :
ABB Corp. Res., Baden, Switzerland
fYear :
1998
fDate :
27-29 Sep 1998
Firstpage :
61
Lastpage :
66
Abstract :
In the field of power electronics, advances in device development have traditionally been the driving force for innovation. For the area of medium and high power, this development can be illustrated in terms of switching power of bipolar devices. Although a relatively mature state has been reached, there is still an evolution at a remarkable speed. Presently, the major representatives are the IGBT and the IGCT. A sizeable effort is spent on new materials like SiC devices, which promise a significant reduction in switching losses. Hybrid integration of power devices into relatively large building blocks is an important issue. The current trends connected with present and future improvements of performance are discussed
Keywords :
insulated gate bipolar transistors; losses; power bipolar transistors; power semiconductor devices; power semiconductor switches; semiconductor device packaging; thyristors; IGBT; IGCT; SiC; SiC devices; advanced power bipolar devices; insulated gate controlled thyristors; power electronics; switching losses reduction; Circuit synthesis; Costs; Insulated gate bipolar transistors; Integrated circuit reliability; Power electronics; Standardization; Switching loss; Technological innovation; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-4497-9
Type :
conf
DOI :
10.1109/BIPOL.1998.741882
Filename :
741882
Link To Document :
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