DocumentCode :
2502086
Title :
SiGe and GaAs as competitive technologies for RF-applications
Author :
König, Ulf
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
fYear :
1998
fDate :
27-29 Sep 1998
Firstpage :
87
Lastpage :
92
Abstract :
The status of SiGe HBTs is reviewed and related to III/V HBTs and HFETs. Figures of merit considered are DC performance (gains, Gummel plot), frequencies (fT, fmax), noise (Fmin , fC), and power aspects (PAE). Criteria for a further optimization of SiGe HBTs (layer parameters, layout rules, technologies) are pointed out
Keywords :
Ge-Si alloys; III-V semiconductors; MMIC; UHF bipolar transistors; UHF field effect transistors; UHF integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit noise; integrated circuit technology; microwave bipolar transistors; microwave field effect transistors; semiconductor device noise; semiconductor materials; DC performance; GaAs; GaAs technologies; III-V HBTs; III-V HFETs; PAE; RF applications; SiGe; SiGe HBTs; SiGe technologies; figures of merit; layer parameters; layout rules; noise; power added efficiency; Delay; Frequency; Gallium arsenide; Germanium silicon alloys; HEMTs; Linearity; MODFETs; Noise figure; Presence network agents; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-4497-9
Type :
conf
DOI :
10.1109/BIPOL.1998.741886
Filename :
741886
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2502086
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