Title :
Monolithic transformers for silicon RF IC design
Author :
Cheung, Dickson T S ; Long, John R. ; Hadaway, R.A. ; Harame, D.L.
Author_Institution :
Toronto Univ., Ont., Canada
Abstract :
The construction and electrical characteristics of two-port transformers (1:1 and 1:n turns ratio) and multi-port transformer baluns fabricated in a production silicon technology are presented. A high-linearity 5 GHz mixer design illustrates the advantages of the trifilar transformer in an RF IC application
Keywords :
MMIC mixers; UHF integrated circuits; baluns; bipolar MMIC; elemental semiconductors; equivalent circuits; high-frequency transformers; integrated circuit design; silicon; 5 GHz; MMIC; Si; Si RF IC design; electrical characteristics; mixer design; monolithic transformers; multi-port transformer baluns; production Si bipolar technology; trifilar transformer; two-port transformers; Frequency measurement; Impedance matching; Microstrip; Monolithic integrated circuits; Phase measurement; Radio frequency; Radiofrequency integrated circuits; Silicon; Spirals; Transformers;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741890
