DocumentCode
2502467
Title
40 Gb/s integrated clock and data recovery circuit in a silicon bipolar technology
Author
Wurzer, M. ; Bock, J. ; Zirwas, W. ; Knapp, H. ; Schumann, F. ; Felder, A. ; Treitinger, L.
Author_Institution
Siemens AG, Munich, Germany
fYear
1998
fDate
27-29 Sep 1998
Firstpage
136
Lastpage
139
Abstract
An integrated clock and data recovery circuit (CDR) applying the PLL technique has been developed for future optical transmission systems. It is fabricated in a 0.5 μm/50 GHz fT double-polysilicon bipolar technology using only production-like process steps. The circuit operates up to 40 Gb/s, which is the highest operating speed to date for this type of IC in a silicon bipolar technology
Keywords
bipolar digital integrated circuits; digital phase locked loops; elemental semiconductors; flip-flops; high-speed integrated circuits; optical communication equipment; silicon; synchronisation; timing circuits; 0.5 micron; 40 Gbit/s; D-flip-flop; PLL technique; Si; Si bipolar technology; double-polysilicon bipolar technology; integrated clock/data recovery circuit; optical transmission systems; Clocks; Delay; Filters; Flip-flops; High speed optical techniques; Integrated circuit technology; Master-slave; Repeaters; Silicon; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-4497-9
Type
conf
DOI
10.1109/BIPOL.1998.741905
Filename
741905
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