Title :
Monolithic sampling head IC with resonant tunneling diode for strobe pulse generator on InP substrate
Author :
Miura, A. ; Kobayashi, S. ; Yakihara, T. ; Uchida, Seiichi ; Kamada, H. ; Oka, S.
Author_Institution :
Yokogawa Electr. Corp., Tokyo, Japan
Abstract :
Summary form only given. The authors describe a sampling head IC which consists of a resonant-tunneling-diode (RTD) for strobe pulse generation and a Schottky barrier diode for a sampling bridge. The RTD is made using an InGaAs-AlAs-InGaAs-AlAs-InGaAs strained layer superlattice system. The Schottky barrier diode is made from an (InGaAs)/sub 0.5/(InAlAs)/sub 0.5/ mixing crystal on the RTD´s superlattice system. Successful results were obtained in the trial fabrication of the fully integrated monolithic sampling head IC.<>
Keywords :
III-V semiconductors; Schottky-barrier diodes; aluminium compounds; gallium arsenide; indium compounds; monolithic integrated circuits; pulse generators; resonant tunnelling devices; semiconductor superlattices; tunnel diodes; III-V semiconductors; InGaAs-AlAs-InGaAs; InP; RTD; Schottky barrier diode; resonant tunneling diode; sampling bridge; sampling head IC; strained layer superlattice system; strobe pulse generator; Bridges; Indium compounds; Indium gallium arsenide; Monolithic integrated circuits; Pulse generation; Resonant tunneling devices; Sampling methods; Schottky barriers; Schottky diodes; Superlattices;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74200
