Title :
The effect of dihydride bonding on the electrical properties of a-Si:H (solar cells)
Author :
Varhue, W.J. ; Burrows, V.A. ; Chao, H.
Author_Institution :
Arizona State Univ., Tempe, AZ, USA
Abstract :
Thin films of a-Si:H have been prepared in an inductively coupled RF discharge of silane/hydrogen mixtures. The electron drift mobility, photo-to-dark conductivity ratio, and activation energy were found to vary with hydrogen dilution. FTIR spectroscopy reveals that SiH and SiH2 bond concentrations increase with H2 dilution. The change in the electrical properties observed with H2 dilution can be explained by the increase in dihydride bonding concentration.
Keywords :
Fourier transform spectra; amorphous semiconductors; carrier mobility; electrical conductivity of amorphous semiconductors and insulators; elemental semiconductors; hydrogen; infrared spectra of inorganic solids; photoconductivity; semiconductor thin films; silicon; solar cells; FTIR spectroscopy; H2; RF discharge; Si:H solar cells; SiH; SiH2; activation energy; dihydride bonding; electrical properties; electron drift mobility; elemental semiconductors; photo-to-dark conductivity ratio; thin films; Bonding; Conducting materials; Conductivity; Electron mobility; Electron traps; Hydrogen; Inductors; Microscopy; Photoconductivity; Photovoltaic cells; Radio frequency; Spectroscopy; State estimation; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105711
