Title :
BaxSr1-xTiO3 thin films made by TurbodiscTM PE-MOCVD techniques
Author :
Li, Tingkai ; Zawadzki, Pete ; Stall, Richard A.
Author_Institution :
EMCORE Corp., Somerset, NJ, USA
Abstract :
TurboDisc(TM) and Plasma Enhanced MOCVD techniques have been used to deposit BaxSr1-xTiO3 (BST) thin films. The precursors for making the BST thin films were derived from Ba(thd)2, Sr(thd)2 and titanium isopropoxide (TIP). The BST thin films were deposited onto Pt/Ti/Si02/Si wafers, Si (100) wafers and single-crystal sapphire substrates to measure their phase formation, thickness uniformity and electrical properties. Typically, 200 nm thick Ba0.5Sr0.5TiO3 thin films on Pt electrodes have a dielectric constant of approximately 600, and a leakage current of less than 2×10-7 A/cm2 at 100 kV/cm and room temperature. These characteristics suggest that the TurboDisc(TM), PE-MOCVD technique could be used in the creation of reliable, high density memory devices. In addition, the relationship between composition, microstructure and electrical properties of BST thin films was also investigated
Keywords :
DRAM chips; ULSI; barium compounds; capacitors; dielectric thin films; leakage currents; permittivity; plasma CVD; solid solutions; strontium compounds; 200 nm; BaSrTiO3; DRAMS; PE-MOCVD techniques; Turbodisc; VLSI; dielectric constant; electrical properties; high density memory devices; leakage current; phase formation; single-crystal sapphire substrates; thickness uniformity; Binary search trees; Dielectric measurements; Dielectric substrates; MOCVD; Plasmas; Semiconductor thin films; Sputtering; Strontium; Titanium; Transistors;
Conference_Titel :
Electronics Manufacturing Technology Symposium, 1996., Nineteenth IEEE/CPMT
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3642-9
DOI :
10.1109/IEMT.1996.559730
