Title :
Lightweight GaAs/Ge solar cells
Author :
Patel, Rushikesh M. ; Gersten, S.W. ; Perrachione, D.R. ; Yeh, Y.C.M. ; Wagner, D.K. ; Morris, R.K.
Author_Institution :
Appl. Solar Energy Corp., City of Industry, CA, USA
Abstract :
Rugged, thin (<4 mil thick) GaAs-on-germanium 4 cm*4 cm solar cells with an AM0 conversion efficiency of up to 16.9% have been demonstrated. A processing technique suitable for high-volume production of large-area, thin cells has been established. The thinning technique developed here can also be used in the fabrication of high-efficiency lightweight GaAs/Ge and AlGaAs/Ge monolithic tandem cells.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; semiconductor thin films; solar cells; AM0 conversion efficiency; GaAs-Ge solar cells; fabrication; high-efficiency; lightweight monolithic tandem cells; semiconductor; thinning technique; Chemical vapor deposition; Etching; Fabrication; Gallium arsenide; Germanium; Large-scale systems; Photovoltaic cells; Production; Silicon; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105774
