Title :
Integration of 980 nm AlGaAs/InGaAs laser diode and semiconductor optical amplifier
Author :
Wilk, Rafal ; Goralik, Grzegorz ; Sciana, Beata ; Tlaczala, Marek ; Patela, Sergiusz
Author_Institution :
Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
Abstract :
In this paper a new concept of a light source integrated with semiconductor optical amplifier (SOA) is described. The device model and results of computer simulations are presented. Influence of the number of quantum wells (QW) in an active region on the device performance is discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; quantum well lasers; semiconductor optical amplifiers; 980 nm; AlGaAs-InGaAs; active region; computer simulations; device model; device performance; laser diode; quantum wells; semiconductor optical amplifier; Charge carrier processes; Diode lasers; Gallium arsenide; Indium gallium arsenide; Light sources; Optical amplifiers; Optical noise; Radiative recombination; Semiconductor diodes; Semiconductor optical amplifiers;
Conference_Titel :
Electronics Technology: Integrated Management of Electronic Materials Production, 2003. 26th International Spring Seminar on
Print_ISBN :
0-7803-8002-9
DOI :
10.1109/ISSE.2003.1260551
