Title :
Mean time to failure of SnAgCuNi solder joints under DC
Author :
Basaran, Cemal ; Li, Shidong ; Hopkins, Douglas C. ; Yao, Wei
Author_Institution :
Electron. Packaging Lab., State Univ. of New York at Buffalo, Buffalo, NY, USA
fDate :
May 30 2012-June 1 2012
Abstract :
Electromigration time to failure and electrical resistivity of 95.5%Sn-1.5%Ag-0.5%Cu-0.03W%Ni (SACN) microelectronics solder joints have been investigated experimentally. A Black´s type electromigration time to failure equation is developed to describe the time to failure versus current density and temperature. The activation energy over the range of 83°C~174°C is measured to be 0.77±0.12eV, and the current density exponent is found to be (8.60±1.65). It is also shown that the most commonly used Black´s electromigration time to failure equation cannot be used for solder joints.
Keywords :
copper alloys; current density; electromigration; failure analysis; integrated circuit reliability; nickel alloys; silver alloys; solders; tin alloys; SACN microelectronics solder joints; SnAgCuNi; activation energy; black type electromigration time to failure equation; current density exponent; electrical resistivity; mean time to failure; Current density; Electromigration; Equations; Resistance; Resistance heating; Soldering; Temperature measurement; Electromigration; lead-free solder joints; resistance evolution; solder joint resistance; time to failure;
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2012 13th IEEE Intersociety Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9533-7
Electronic_ISBN :
1087-9870
DOI :
10.1109/ITHERM.2012.6231474
