Title :
Terahertz radiations from GaAs surfaces with disordered nano-pillars
Author :
Kang, C. ; Leem, J.W. ; Lee, J.W. ; Yu, J.S. ; Kee, C. -S
Author_Institution :
Nanophotonics Lab., GIST, Gwangju, South Korea
Abstract :
We present characteristics of terahertz pulses generated from GaAs surfaces with disordered nano-pillars under femtosecond laser excitation. Nano-pillars on a GaAs surface decreases (increases) a temporal (spectral) bandwidth of a THz pulse from the surface. The results imply that randomly distributed scattering sites due to the nanostructures make the decay time of photo-carriers short and reduce the surface surge currents.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; nanostructured materials; terahertz wave spectra; GaAs; disordered nanopillars; femtosecond laser excitation; photocarriers; spectral bandwidth; surface surge currents; temporal bandwidth; terahertz radiations; Bandwidth; Gallium arsenide; Gold; Nanostructures; Optical surface waves; Surface treatment; Surface waves;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380099
