Title :
Effect of noise on the performance of MODFET
Author :
Sonti, V. J K Kishor ; Kannan, V.
Author_Institution :
Sathyabama Univ., Chennai, India
Abstract :
In this paper, an analysis on the effect of noise on the performance of the MODFET was carried out. Here the MODFET model considered is of 0.25 × 200 um2 technology. The equivalent noise model is used and the transconductance with respect to frequency is analyzed and also the variation of the drain current with frequency is also analyzed under the influence of the noise. In this paper the work is carried out using PSPICE AD simulation software.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; MODFET model; PSPICE AD simulation software; drain current variation; equivalent noise model; noise effect; Aluminum gallium nitride; Analytical models; Frequency modulation; Gallium nitride; HEMTs; MODFETs; Noise; AlGaN/GaN; MODFET; drain current; thermal noise; transconductance;
Conference_Titel :
Recent Advances in Space Technology Services and Climate Change (RSTSCC), 2010
Conference_Location :
Chennai
Print_ISBN :
978-1-4244-9184-1
DOI :
10.1109/RSTSCC.2010.5712840
