Title :
A pseudomorphic MODFET structure with excellent linear power performance at mm-wave range
Author :
Zhou, G.-G. ; Chan, K.T. ; Hughes, B. ; Mierzwinski, M. ; Kondoh, H.
Author_Institution :
Hewlett-Packard, Santa Rosa, CA, USA
Abstract :
The design, fabrication, and excellent linear power performance at the millimeter-wave frequency range of a modified InGaAs channel pseudomorphic MODFET structure are reported. This structure replaced the conventional n/sup +/ AlGaAs carrier supply layer with an n/sup +/ GaAs carrier supply layer. g/sub m/ was improved at high gate bias due to the superior carrier transport property of n/sup +/ GaAs compared to that of n/sup +/ AlGaAs. This g/sub m/ improvement results in relatively flat and broad f/sub T/ and f/sub max/ versus gate bias curves. Consequently, record high P/sub 1db/ of 0.68 W/mm with G/sub 1dB/ of 12.9 dB and power-added-efficiency of 45% was achieved at 25 GHz on a 0.33- mu m*120- mu m device. The P/sub out/ at maximum-power-added-efficiency point was as high as 0.81 W/mm with 10.9-dB gain and power-added efficiency of 59%.<>
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 10.9 dB; 12.9 dB; 25 GHz; 45 percent; 59 percent; GaAs-InGaAs-AlGaAs; carrier supply layer; gate bias; linear power performance; maximum-power-added-efficiency point; mm-wave range; pseudomorphic MODFET structure; superior carrier transport property; Degradation; Fabrication; Gallium arsenide; HEMTs; Indium gallium arsenide; MISFETs; MODFETs; Microwave technology; Performance gain; Quantum well devices;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74239
