Title :
Characterization of window layers in CuInSe2 thin-film solar cells
Author :
Shafarman, W.N. ; Birkmire, R.W.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
Electrical and optical properties of (CdZn)S:In, (CdZn)S:In/ITO, and ZnO windows in CuInSe2 thin-film solar cells were measured and compared to the properties of equivalent window layers deposited on glass. The resistivity and absorption edge of (CdZn)S:In films are characterized as a function of In dopant concentration and Zn content, and it is shown that the Burstein-Moss shift decreases as the Zn content is raised. Air heat treatments, used to increase Voc and efficiency of CuInSe2 cells, increase the resistivity and decrease the absorption edge of (CdZn)S:In window layers. CuInSe2/ZnO cells are shown to have higher Jsc than cells with (CdZn)S windows but low Voc and efficiency.
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; indium; semiconductor thin films; solar cells; ternary semiconductors; zinc compounds; Burstein-Moss shift; CdZnS:In; CuInSe2; In dopant concentration; Mo; Zn content; ZnO; absorption edge; characterization; efficiency; electrical properties; heat treatments; optical properties; resistivity; thin-film solar cells; window layers; Absorption; Conductivity; Electric variables measurement; Glass; Indium tin oxide; Optical films; Photovoltaic cells; Sputtering; Windows; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105963
