DocumentCode :
2511872
Title :
High-speed optoelectronics receivers in SiGe
Author :
Gupta, Amit ; Levitan, Steven P. ; Selavo, Leo ; Chiarulli, Donald M.
Author_Institution :
Pittsburgh Univ., PA, USA
fYear :
2004
fDate :
2004
Firstpage :
957
Lastpage :
960
Abstract :
This paper focuses on the investigation of integrated CMOS and Silicon/Germanium (SiGe) devices for highspeed optical receiver circuits. In this paper, we present several competitive designs of front-end transimpedance amplifiers (TIA) for optical receiver applications using the IBM 5HP (0.5 micron) SiGe technology. This technology exhibits fT and fMAX of 47 GHz and 65 GHz respectively. Spectre simulations in the Cadence Affirma analog design environment are conducted for both the TIA´s and a complete receiver circuit consisting of a TIA, a cascaded multi-stage differential amplifier and a multi-stage inverting amplifier at the single supply voltage of 3.3 V. We also discuss the practicality of using SiGe based photodetectors for 1.3-1.5 μm wavelength light and the use of Neolinear´s NeoCircuit/NeoCell mixed signal design tools for optimization of the analog circuits.
Keywords :
CMOS analogue integrated circuits; Ge-Si alloys; analogue integrated circuits; circuit optimisation; circuit simulation; differential amplifiers; high-speed integrated circuits; integrated optoelectronics; optical receivers; photodetectors; semiconductor devices; 0.5 micron; 1.3 to 1.5 micron; 3.3 V; 47 GHz; 65 GHz; Cadence Affirma analog design; NeoCell mixed signal design; Neolinears NeoCircuit; SiGe technology; analog circuits; cascaded multistage differential amplifier; front end transimpedance amplifiers; high speed optoelectronics receivers; integrated CMOS devices; multistage inverting amplifier; optical receiver applications; optimization; photodetectors; spectre simulation; CMOS technology; Differential amplifiers; Germanium silicon alloys; Integrated circuit technology; Optical amplifiers; Optical design; Optical receivers; Semiconductor optical amplifiers; Signal design; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, 2004. Proceedings. 17th International Conference on
Print_ISBN :
0-7695-2072-3
Type :
conf
DOI :
10.1109/ICVD.2004.1261054
Filename :
1261054
Link To Document :
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