DocumentCode :
2512178
Title :
Hydrogen passivation of large-area polycrystalline silicon solar cells by high-current ion implantation
Author :
Yagi, H. ; Matsukuma, K. ; Kokunai, S. ; Kida, Y. ; Kawakami, N. ; Nishinoiri, K. ; Saitoh, T. ; Shimokawa, R. ; Morita, K.
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
fYear :
1988
fDate :
1988
Firstpage :
1600
Abstract :
The fabrication of highly efficient, large-area polycrystalline silicon solar cells using ion implantation as a hydrogen passivation technique is presented. The development of a high-current ion implanter with a bucket-type ion source to hydrogenate crystal defects in cast polycrystalline cells is also presented. Effective hydrogen passivation of the defects is realized by implanting hydrogen ions into the back surface of the cells and increasing the hydrogen ion energy and dose. The results show that the polycrystalline cells exhibit a high conversion efficiency of 15.2% for a large area of 100 cm2.
Keywords :
elemental semiconductors; hydrogen; ion implantation; passivation; semiconductor doping; silicon; solar cells; 100 cm; 15.2 percent; H passivation; Si:H; back surface; bucket-type ion source; conversion efficiency; crystal defects; fabrication; high-current ion implantation; high-current ion implanter; large area polycrystalline Si solar cells; Fabrication; Hydrogen; Ion implantation; Ion sources; Magnetic fields; Passivation; Photovoltaic cells; Plasma temperature; Silicon; Yagi-Uda antennas;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105982
Filename :
105982
Link To Document :
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