Title :
Influence of band parameter of gate dielectrics on the ballistic performance at same EOT
Author :
Alam, Md Nur Kutubul ; Islam, Md Shariful ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
Different high-k dielectrics have been supposed to provide same device performance if their physical thickness are not equal but equivalent, called “Equivalent oxide thickness” (EOT). For ultra thin body (UTB) devices like XOI, despite of EOT, conduction band offset (ΔEC) at gate oxide-channel interface dominates the ballistic performance. In case of In0.3Ga0.7Sb XOI nFET using Al2O3 and HfO2 with 0.5 nm EOT, we show the threshold voltage decreases and the subthreshold slope (SS) increases with increase in ΔEC.
Keywords :
high-k dielectric thin films; transistors; Al2O3; EOT; HfO2; In0.3Ga0.7Sb; UTB devices; XOI nFET; band parameter; conduction band offset; equivalent oxide thickness; gate dielectrics; gate oxide-channel interface; high-k dielectrics; size 0.5 nm; ultrathin body devices; Dielectrics; Hafnium compounds; Logic gates; Performance evaluation; Threshold voltage; Transistors; Ballistic transport; High K; InGaSb; NEGF; XOI; gate dielectric;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2014 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-4167-4
DOI :
10.1109/ICECE.2014.7026887
