Title :
Two-dimensional simulator for semiconductor lasers
Author :
Song, G.H. ; Hess, K. ; Kerkhoven, T. ; Ravaioli, U.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
A versatile two-dimensional simulator for continuous-wave semiconductor lasers has been developed. The simulator is capable of spectral analysis of quantum-well semiconductor lasers, such as gain-spectrum analysis, as well as analysis of the two-dimensional current flow and optical intensity pattern. The simulator is also capable of computing the internal two-dimensional temperature distribution of the laser. To develop the simulator, the authors have included a heat transfer equation for optoelectronic semiconductor devices and have developed a modified Scharfetter-Gummel algorithm which can solve the carrier-continuity equations with the temperature as an independent variable. They also have used the accurate photon rate equation for each Fabry-Perot mode. For the optical intensity pattern, they have directly solved the two-dimensional Helmholtz eigenvalue equation using the simultaneous iteration method. To demonstrate the simulator, a model graded-index separate-confinement-heterostructure buried-quantum-well laser is analyzed.<>
Keywords :
electronic engineering computing; gradient index optics; laser modes; semiconductor junction lasers; spectral analysis; temperature distribution; Fabry-Perot mode; Scharfetter-Gummel algorithm; carrier-continuity equations; continuous-wave semiconductor lasers; gain-spectrum analysis; heat transfer equation; internal two-dimensional temperature distribution; model graded-index separate-confinement-heterostructure buried-quantum-well laser; optical intensity pattern; optoelectronic semiconductor devices; photon rate equation; quantum-well semiconductor lasers; simultaneous iteration method; spectral analysis; two-dimensional Helmholtz eigenvalue equation; two-dimensional current flow; versatile two-dimensional simulator; Analytical models; Computational modeling; Distributed computing; Equations; Image motion analysis; Laser modes; Pattern analysis; Quantum well lasers; Semiconductor lasers; Spectral analysis;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74247