Title :
Performance evaluation of silicon and gallium nitride power FETs for DC/DC power converter applications
Author :
Shenai, Krishna ; Shah, Krushal ; Xing, Huili
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA
Abstract :
Detailed performance evaluation of silicon and GaN power FETs is presented for chip-scale DC/DC converter applications. It is shown that improved GaN power FETs and silicon MOS power diodes can potentially lead to nearly 90% power conversion efficiency when switched at 5 MHz in a synchronous buck converter topology.
Keywords :
DC-DC power convertors; elemental semiconductors; gallium compounds; network topology; power field effect transistors; silicon; DC-DC power converter applications; GaN; MOS power diodes; Si; chip-scale converter; frequency 5 MHz; performance evaluation; power FET; synchronous buck converter topology; Converters; FETs; Gallium nitride; Logic gates; Performance evaluation; Silicon; Switches; DC-to-DC converter; Gallium nitride (GaN) FET; synchronous buck topology;
Conference_Titel :
Aerospace and Electronics Conference (NAECON), Proceedings of the IEEE 2010 National
Conference_Location :
Fairborn, OH
Print_ISBN :
978-1-4244-6576-7
DOI :
10.1109/NAECON.2010.5712970
